EP2C50U484C8N vs EP2C50U484C8 Comparación
Comparación detallada lado a lado de EP2C50U484C8N por Intel y EP2C50U484C8 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2C50U484C8N | EP2C50U484C8 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $155,85 | $72,89 |
| Series | Cyclone II | — |
| Family | Cyclone II (90 nm) | Cyclone II |
| Logic Elements (LE) | 50,528 | — |
| Embedded Memory (M4K blocks) | 594,432 bits (129 M4K blocks) | — |
| Embedded 18x18 Multipliers | 86 | 86 |
| PLLs | 4 | 4 |
| User I/Os | 294 | — |
| I/O Banks | 8 | — |
| Speed Grade | C8 (commercial, mid-tier) | C8 (-8 speed bin) |
| Temperatura de funcionamiento | 0C to +85C (commercial) | 0 °C to +85 °C (Commercial) |
| Encapsulado | 484-ball FBGA (UBGA-484) | 484-ball FineLine BGA (UBGA-484), 19 x 19 mm, 1.0 mm pitch |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | 90 nm low-k CMOS | — |
| Configuration Methods | Passive Serial, Active Serial, JTAG | — |
| Memory Interface Support | DDR, DDR2, SDR SDRAM, QDRII SRAM | — |
| Estado RoHS | Compliant (lead-free) | — |
| Nivel MSL | 3 (168 hours) | — |
| Logic Elements | — | 50,528 |
| Logic Array Blocks (LABs) | — | 3,158 |
| Embedded Memory Bits | — | 594,432 |
| M4K RAM Blocks | — | 250 (4 Kbit each) |
| User I/O Pins | — | 294 (132 differential pairs max) |
| Process Node | — | 90 nm CMOS |
| Core Voltage | — | 1.15 V to 1.25 V |
| Configuration Modes | — | JTAG, Active Serial (AS), Active Parallel (AP), Passive Serial (PS) |
| Lead-Free / RoHS | — | Lead-free (UBGA package), RoHS compliant |