EP2S180F1020C3 vs EP2S180F1020C5 Comparación
Comparación detallada lado a lado de EP2S180F1020C3 por Intel y EP2S180F1020C5 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP2S180F1020C3 | EP2S180F1020C5 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1.280,00 | $3.357,86 |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | 8,970 |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Encapsulado | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FCBGA (33 x 33 mm, 1.0 mm pitch) |
| Tipo de montaje | Surface Mount | Surface Mount (BGA) |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | 1.15 V to 1.25 V |
| Speed Grade | C3 | C5 |
| Temperatura de funcionamiento | Commercial (0C to +85C) | 0 C to +85 C (commercial) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | — |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs_status] |
| Family | — | Stratix II |
| Logic Elements (LE) | — | 179,400 |
| Configurable Logic Blocks (CLBs) | — | 71,760 |
| Total RAM Bits | — | 9,383,040 |
| User I/O Pins | — | 742 |
| Process Technology | — | 90 nm CMOS |
| Configuration Mode | — | JTAG / Passive Serial / Passive Parallel / Active Serial |
| Number of Transceivers | — | [DATA_NEEDED: transceiver_count] |