EP2S180F1020C3 vs EP2S180F1020C5 Comparaison
Comparaison détaillée côte à côte de EP2S180F1020C3 par Intel et EP2S180F1020C5 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP2S180F1020C3 | EP2S180F1020C5 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Obsolete | NRND |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $1 280,00 | $3 357,86 |
| Series | Stratix II | Stratix II |
| Device Family | EP2S180 | — |
| Equivalent Logic Elements (LEs) | 179,400 | — |
| Logic Array Blocks (LABs) | 8,970 | 8,970 |
| Embedded Memory (RAM bits) | 9,383,040 | — |
| Maximum User I/Os | 742 | — |
| Boîtier | 1020-ball FBGA (flip-chip BGA) | 1020-BBGA, FCBGA (33 x 33 mm, 1.0 mm pitch) |
| Type de montage | Surface Mount | Surface Mount (BGA) |
| Process Node | 90 nm, all-layer copper SRAM | — |
| Core Voltage | 1.2 V | 1.15 V to 1.25 V |
| Speed Grade | C3 | C5 |
| Température de fonctionnement | Commercial (0C to +85C) | 0 C to +85 C (commercial) |
| DSP Blocks | Dedicated high-speed multipliers | — |
| Memory Interfaces Supported | DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| I/O Standards | LVDS, LVPECL, SSTL, HSTL | — |
| Configuration Method | SRAM-based (volatile, requires boot device) | — |
| Development Toolchain | Quartus II / Quartus Prime | — |
| Statut RoHS | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: rohs_status] |
| Family | — | Stratix II |
| Logic Elements (LE) | — | 179,400 |
| Configurable Logic Blocks (CLBs) | — | 71,760 |
| Total RAM Bits | — | 9,383,040 |
| User I/O Pins | — | 742 |
| Process Technology | — | 90 nm CMOS |
| Configuration Mode | — | JTAG / Passive Serial / Passive Parallel / Active Serial |
| Number of Transceivers | — | [DATA_NEEDED: transceiver_count] |