EP3SE260F1152C4 vs EP3SE260F1152I4 Comparación
Comparación detallada lado a lado de EP3SE260F1152C4 por Intel y EP3SE260F1152I4 por Altera. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EP3SE260F1152I4 - Stratix III E FPGA, 255K LE, 1152-FCBGA | Altera
EP3SE260F1152I4 ⚠ Última compraComparación de especificaciones
| Parámetro | EP3SE260F1152C4 | EP3SE260F1152I4 |
|---|---|---|
| Marca | Intel | Altera |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | NRND | Última compra |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8.900,00 | $1.750,00 |
| Series | Stratix III E (Enhanced) | Stratix III E |
| Family | Stratix III | — |
| Logic Elements (LE) | 255,000 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Embedded Memory Bits | 16,672,768 | — |
| User I/O Count | 744 | 744 |
| Process Technology | 65 nm CMOS (TSMC) | — |
| Core Voltage | 1.1 V | — |
| Speed Grade | C4 (slowest commercial grade) | — |
| Maximum Internal Frequency | ~450 MHz (per FPGAkey listing) | — |
| Encapsulado | 1152-pin FC-FBGA (Flip-Chip Fine-pitch BGA) | 1152-BBGA, FCBGA |
| Package Code | BGA, square | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| Configuration Modes | Passive Serial, Fast Passive Parallel, JTAG | — |
| DSP Blocks (18x18 Multipliers) | 384 | 768 maximum |
| PLL Count | [DATA_NEEDED: PLL count] | 12 (Enhanced) |
| Transceivers | External PHY interface only (no integrated GXB) | — |
| Estado RoHS | Compliant (per distributor listings) | Compliant |
| Temperatura de funcionamiento | Commercial (0C to +85C) - inferred from speed grade C4 | -40 C to +100 C (Industrial) |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Manufacturer | — | Altera (now Intel FPGA) |
| Logic Elements | — | 255,000 |
| Embedded Memory | — | 16,672,704 bits (16.67 Mbit) |
| Supply Voltage - Core | — | 1.1 V |
| Process Node | — | 40 nm TSMC |
| Configuration Memory | — | SRAM (volatile) |
| Nivel MSL | — | 4 (72 hours) |