EP3SE260F1152C4 vs EP3SE260F1152I4 Comparaison
Comparaison détaillée côte à côte de EP3SE260F1152C4 par Intel et EP3SE260F1152I4 par Altera. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Altera
EP3SE260F1152I4 - Stratix III E FPGA, 255K LE, 1152-FCBGA | Altera
EP3SE260F1152I4 ⚠ Dernier achatComparaison des spécifications
| Paramètre | EP3SE260F1152C4 | EP3SE260F1152I4 |
|---|---|---|
| Marque | Intel | Altera |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | NRND | Dernier achat |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $8 900,00 | $1 750,00 |
| Series | Stratix III E (Enhanced) | Stratix III E |
| Family | Stratix III | — |
| Logic Elements (LE) | 255,000 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Embedded Memory Bits | 16,672,768 | — |
| User I/O Count | 744 | 744 |
| Process Technology | 65 nm CMOS (TSMC) | — |
| Core Voltage | 1.1 V | — |
| Speed Grade | C4 (slowest commercial grade) | — |
| Maximum Internal Frequency | ~450 MHz (per FPGAkey listing) | — |
| Boîtier | 1152-pin FC-FBGA (Flip-Chip Fine-pitch BGA) | 1152-BBGA, FCBGA |
| Package Code | BGA, square | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, SSTL, HSTL | — |
| Configuration Modes | Passive Serial, Fast Passive Parallel, JTAG | — |
| DSP Blocks (18x18 Multipliers) | 384 | 768 maximum |
| PLL Count | [DATA_NEEDED: PLL count] | 12 (Enhanced) |
| Transceivers | External PHY interface only (no integrated GXB) | — |
| Statut RoHS | Compliant (per distributor listings) | Compliant |
| Température de fonctionnement | Commercial (0C to +85C) - inferred from speed grade C4 | -40 C to +100 C (Industrial) |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| Manufacturer | — | Altera (now Intel FPGA) |
| Logic Elements | — | 255,000 |
| Embedded Memory | — | 16,672,704 bits (16.67 Mbit) |
| Supply Voltage - Core | — | 1.1 V |
| Process Node | — | 40 nm TSMC |
| Configuration Memory | — | SRAM (volatile) |
| Niveau MSL | — | 4 (72 hours) |