EP3SE260F1517I3 vs EP3SE260F1517I3N Comparación
Comparación detallada lado a lado de EP3SE260F1517I3 por Intel y EP3SE260F1517I3N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE260F1517I3 | EP3SE260F1517I3N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Obsolete |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $10.500,00 | $2.275,00 |
| Family | Stratix III E | Stratix® III E |
| Logic Elements | 255,000 | 255,000 |
| Embedded Memory (bits) | 16,672,768 | — |
| Logic Array Blocks (LABs) | 10,200 | 10,200 |
| Maximum User I/Os | 976 | — |
| Encapsulado | 1517-BBGA, FCBGA | 1517-ball FC-FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Operating Temperature Grade | Industrial | — |
| Junction Temperature Range | -40C to +125C | — |
| Core Voltage | 1.0 V typical | 1.1 V |
| Process Technology | 65 nm CMOS | 65 nm |
| Maximum Core Frequency | 717 MHz | — |
| I/O Standards Supported | LVDS, LVTTL, LVCMOS, HSTL, SSTL | — |
| Estado RoHS | Compliant | Compliant |
| Configuration | SRAM-based, volatile (requires external configuration device) | — |
| Embedded Memory Bits | — | 16,672,768 bits |
| User I/O Count | — | 976 |
| Speed Grade | — | -3 (fastest) |
| Temperature Grade | — | Industrial (I): -40 °C to +100 °C |
| Temperatura de unión de funcionamiento | — | -40 °C to +100 °C |
| Configuration Method | — | JTAG / Passive Serial / Active Serial |
| Lead-Free | — | Yes |
| Internal Logic Performance | — | Up to 500 MHz |
| Memory Subsystems | — | M9K + M144K block RAM, DDR2/DDR3/QDR II+ controllers |
| DSP Blocks | — | Yes (dedicated multiply-accumulate) |