EP3SE50F484C3N vs EP3SE50F484C3G Comparación
Comparación detallada lado a lado de EP3SE50F484C3N por Intel y EP3SE50F484C3G por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP3SE50F484C3N | EP3SE50F484C3G |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Obsolete | NRND |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $832,10 | $205,00 |
| Family | Stratix III E | Stratix III E |
| Device Logic Elements | 47,500 | — |
| Logic Array Blocks (LABs) | 1,900 | — |
| Adaptive Logic Modules (ALMs) | 18,750 | 19,000 |
| Embedded Memory (Bits) | 5,760,000 | — |
| User I/Os | 296 | — |
| Maximum Internal Frequency | 717 MHz (typical); 800 MHz per DigChip | — |
| Process Technology | TSMC 40 nm low-power CMOS | — |
| Encapsulado | 484-ball FBGA (FCBGA), 1.0 mm pitch | 484-ball FCBGA (F484), 1.0 mm pitch |
| Tensión de alimentación | Core and I/O voltages per Stratix III E datasheet | — |
| Temperatura de funcionamiento | 0C to +85 C (commercial, C suffix) | 0C to +85C (commercial, "C") |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| Nivel MSL | 3 (per JEDEC J-STD-020 for FCBGA packages) | — |
| Estado RoHS | Lead-free (per DigiKey listing) | Compliant (lead-free) |
| Configuration Mode | Passive Serial, Fast Passive Parallel, Fast Active Serial, JTAG | — |
| Design Software | Intel Quartus II (Stratix III support) | — |
| Estado del ciclo de vida | Obsolete (per Worldway listing 2026-04-05) | — |
| Logic Elements | — | 47,500 |
| Total Embedded Memory | — | 5,760,000 bits (5.76 Mbit) |
| M9K Memory Blocks | — | 320 (2,304 Kbits) |
| M144K Memory Blocks | — | 12 (1,728 Kbits) |
| User I/O Pins | — | 296 |
| 18x18 Multipliers | — | 384 |
| PLLs | — | 4 |
| Global Clock Networks | — | 16 |
| Speed Grade | — | C3 |
| Process Node | — | 65 nm TSMC low-power |
| Core Voltage | — | 1.1 V |