EP4CE15U14A7N vs EP4CE115F23I7N Comparación
Comparación detallada lado a lado de EP4CE15U14A7N por Intel y EP4CE115F23I7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CE15U14A7N | EP4CE115F23I7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $43,50 | $87,95 |
| Family | Cyclone IV E | EP4CE115 (F23 package) |
| Logic Elements (LE) | 15,408 | 114,480 |
| Total Memory Bits | 516,096 bits | — |
| Embedded 18x18 Multipliers | 56 | — |
| General-Purpose PLLs | 4 | — |
| Maximum User I/Os | 165 | 280 |
| Encapsulado | 256-ball UBGA (Ultra-FineLine BGA) | 484-FBGA (F23) 23x23 mm, 1.0 mm pitch |
| Speed Grade | 7 | — |
| Core Voltage | 1.2 V | 1.0 V / 1.2 V |
| Process Node | 60 nm low-power | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -40C to +100C (Industrial) |
| Configuration Modes | JTAG, AS, AP, PS | — |
| Bitstream Encryption | AES-128 (security-enhanced variant) | — |
| External Memory Support | DDR/DDR2 SDRAM, QDRII SRAM, RLDRAM II | — |
| Estado RoHS | Compliant (per distributor listings) | Compliant |
| Series | — | Cyclone IV E |
| Embedded Memory Bits | — | 3,981,312 bits |
| Logic Array Blocks (LABs) | — | 7,180 |
| Number of PLLs | — | 4 |
| 18x18 Hardware Multipliers | — | 266 |
| I/O Voltage Banks | — | 1.2 V / 1.5 V / 1.8 V / 2.5 V / 3.3 V |
| Tipo de montaje | — | Surface Mount |
| Process Technology | — | 60 nm low-power CMOS (TSMC) |
| Configuration Method | — | JTAG, Active Serial, Active Parallel |
| Nivel MSL | — | 3 |
| Lead-Free | — | Yes |