EP4CGX110DF31C8 vs EP4CGX110DF31I7 Comparación
Comparación detallada lado a lado de EP4CGX110DF31C8 por Intel y EP4CGX110DF31I7 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CGX110DF31C8 | EP4CGX110DF31I7 |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $235,80 | $276,34 |
| Series | Cyclone IV GX | Cyclone IV GX |
| Family | Cyclone IV GX (EP4CGX110) | — |
| Device Type | FPGA - Field Programmable Gate Array | — |
| Logic Elements | 109,424 | — |
| Embedded Memory | 5,621,760 bits (M9K blocks) | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: exact LAB count] | Not specified in provided data [DATA_NEEDED: LAB count] |
| Number of I/O | 475 | 475 user I/O |
| Number of Transceivers | Up to 8 (3.125 Gbps) | — |
| Embedded Multipliers (18x18) | 486 | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| Supply Voltage (Core) | 1.2 V | — |
| Process Technology | 60 nm | — |
| Operating Temperature Grade | Commercial (0 C to 85 C), C-suffix | — |
| Encapsulado | 896-FBGA, 31 mm x 31 mm, 1 mm pitch | 896-BGA (FBGA-896), 31 mm |
| Tipo de montaje | Surface Mount (BGA) | Surface Mount |
| PCIe Hard IP | Yes (integrated PCIe Gen1) | — |
| Configuration | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| Design Software | Quartus Prime (Qsys / Platform Designer) | — |
| Estado RoHS | Compliant (per datasheet) | Compliant |
| Device Logic Elements | — | 109,424 |
| Total Memory Bits | — | 5,621,760 |
| Multipliers (18x18) | — | 432 |
| PLLs | — | 4 |
| Transceivers | — | 8 (up to 3.125 Gbps) |
| M9K Memory Blocks | — | 270 |
| Ball Pitch | — | 0.8 mm |
| Speed Grade | — | -7 |
| Temperature Grade | — | Industrial (-40C to +100C Tj) |
| Core Voltage | — | 1.2 V typical |
| Configuration Method | — | SRAM (EPCS or JTAG) |
| Nivel MSL | — | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] |