EP4CGX110DF31C8 vs EP4CGX110DF31I7 Comparaison
Comparaison détaillée côte à côte de EP4CGX110DF31C8 par Intel et EP4CGX110DF31I7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP4CGX110DF31C8 | EP4CGX110DF31I7 |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $235,80 | $276,34 |
| Series | Cyclone IV GX | Cyclone IV GX |
| Family | Cyclone IV GX (EP4CGX110) | — |
| Device Type | FPGA - Field Programmable Gate Array | — |
| Logic Elements | 109,424 | — |
| Embedded Memory | 5,621,760 bits (M9K blocks) | — |
| Number of Logic Array Blocks (LABs) | [DATA_NEEDED: exact LAB count] | Not specified in provided data [DATA_NEEDED: LAB count] |
| Number of I/O | 475 | 475 user I/O |
| Number of Transceivers | Up to 8 (3.125 Gbps) | — |
| Embedded Multipliers (18x18) | 486 | — |
| Number of PLLs | [DATA_NEEDED: PLL count] | — |
| Supply Voltage (Core) | 1.2 V | — |
| Process Technology | 60 nm | — |
| Operating Temperature Grade | Commercial (0 C to 85 C), C-suffix | — |
| Boîtier | 896-FBGA, 31 mm x 31 mm, 1 mm pitch | 896-BGA (FBGA-896), 31 mm |
| Type de montage | Surface Mount (BGA) | Surface Mount |
| PCIe Hard IP | Yes (integrated PCIe Gen1) | — |
| Configuration | JTAG, Active Serial (AS), Passive Serial (PS), Fast Passive Parallel (FPP) | — |
| Design Software | Quartus Prime (Qsys / Platform Designer) | — |
| Statut RoHS | Compliant (per datasheet) | Compliant |
| Device Logic Elements | — | 109,424 |
| Total Memory Bits | — | 5,621,760 |
| Multipliers (18x18) | — | 432 |
| PLLs | — | 4 |
| Transceivers | — | 8 (up to 3.125 Gbps) |
| M9K Memory Blocks | — | 270 |
| Ball Pitch | — | 0.8 mm |
| Speed Grade | — | -7 |
| Temperature Grade | — | Industrial (-40C to +100C Tj) |
| Core Voltage | — | 1.2 V typical |
| Configuration Method | — | SRAM (EPCS or JTAG) |
| Niveau MSL | — | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] |