EP4CGX110DF31C8N vs EP4CE75F29C8N Comparación
Comparación detallada lado a lado de EP4CGX110DF31C8N por Intel y EP4CE75F29C8N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CGX110DF31C8N | EP4CE75F29C8N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $325,00 | $149,75 |
| Family | Cyclone IV GX | — |
| Logic Elements | 109,424 | — |
| Logic Array Blocks (LABs) | 6,839 | — |
| Embedded Memory Bits | 5,621,760 (approximately 702 Kbits) | — |
| Embedded Memory Blocks | M9K blocks, 9-bit parity | — |
| DSP Blocks (18x18 Multipliers) | 264 multipliers | — |
| Maximum User I/Os | 475 | — |
| I/O Banks | 8 | — |
| PLLs | 4 general-purpose PLLs | — |
| Transceivers | 8 high-speed transceivers up to 3.125 Gbps | — |
| PCI Express Hard IP | PCIe Gen1/Gen2 x1/x2/x4 | — |
| Core Supply Voltage | 1.2 V | — |
| Process Technology | 60 nm low-power CMOS | — |
| Encapsulado | 896-ball FineLine BGA (F31), 31 mm | 780-FBGA (29x29 mm, F29) |
| Operating Temperature (Commercial) | 0C to 85C | — |
| Speed Grade | 8 | — |
| Configuration | SRAM-based, supports AS, PS, JTAG, FPP | — |
| Estado RoHS | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Logic Elements (LE) | — | 75,408 |
| Number of LABs/CLBs | — | 4713 |
| Total RAM Bits | — | 2,810,880 |
| Number of I/O | — | 426 |
| Number of Logic Elements/Cells | — | 75,408 |
| Number of Gates | — | [DATA_NEEDED: gates count] |
| Voltage - Supply | — | 1.15 V to 1.25 V |
| Temperatura de funcionamiento | — | 0C to +85C |
| Tipo de montaje | — | Surface Mount |
| Number of Multipliers (18x18) | — | 200 |
| Number of PLLs | — | 4 |
| Configuration Method | — | JTAG / Active Serial / Passive Serial |
| I/O Standards | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| Process Node | — | 60 nm |