EP4CGX110DF31C8N vs EP4CE75F29C8N Comparaison
Comparaison détaillée côte à côte de EP4CGX110DF31C8N par Intel et EP4CE75F29C8N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP4CGX110DF31C8N | EP4CE75F29C8N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $325,00 | $149,75 |
| Family | Cyclone IV GX | — |
| Logic Elements | 109,424 | — |
| Logic Array Blocks (LABs) | 6,839 | — |
| Embedded Memory Bits | 5,621,760 (approximately 702 Kbits) | — |
| Embedded Memory Blocks | M9K blocks, 9-bit parity | — |
| DSP Blocks (18x18 Multipliers) | 264 multipliers | — |
| Maximum User I/Os | 475 | — |
| I/O Banks | 8 | — |
| PLLs | 4 general-purpose PLLs | — |
| Transceivers | 8 high-speed transceivers up to 3.125 Gbps | — |
| PCI Express Hard IP | PCIe Gen1/Gen2 x1/x2/x4 | — |
| Core Supply Voltage | 1.2 V | — |
| Process Technology | 60 nm low-power CMOS | — |
| Boîtier | 896-ball FineLine BGA (F31), 31 mm | 780-FBGA (29x29 mm, F29) |
| Operating Temperature (Commercial) | 0C to 85C | — |
| Speed Grade | 8 | — |
| Configuration | SRAM-based, supports AS, PS, JTAG, FPP | — |
| Statut RoHS | Compliant | Compliant |
| Series | — | Cyclone IV E |
| Logic Elements (LE) | — | 75,408 |
| Number of LABs/CLBs | — | 4713 |
| Total RAM Bits | — | 2,810,880 |
| Number of I/O | — | 426 |
| Number of Logic Elements/Cells | — | 75,408 |
| Number of Gates | — | [DATA_NEEDED: gates count] |
| Voltage - Supply | — | 1.15 V to 1.25 V |
| Température de fonctionnement | — | 0C to +85C |
| Type de montage | — | Surface Mount |
| Number of Multipliers (18x18) | — | 200 |
| Number of PLLs | — | 4 |
| Configuration Method | — | JTAG / Active Serial / Passive Serial |
| I/O Standards | — | LVDS, LVTTL, LVCMOS, SSTL, HSTL |
| Process Node | — | 60 nm |