EP4CGX110DF31I7 vs EP4CGX110DF31C7N Comparación
Comparación detallada lado a lado de EP4CGX110DF31I7 por Intel y EP4CGX110DF31C7N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EP4CGX110DF31I7 | EP4CGX110DF31C7N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $276,34 | $112,40 |
| Series | Cyclone IV GX | — |
| Device Logic Elements | 109,424 | — |
| Total Memory Bits | 5,621,760 | — |
| Number of Logic Array Blocks (LABs) | Not specified in provided data [DATA_NEEDED: LAB count] | — |
| Number of I/O | 475 user I/O | — |
| Multipliers (18x18) | 432 | — |
| PLLs | 4 | 4 general-purpose |
| Transceivers | 8 (up to 3.125 Gbps) | 8 channels, up to 3.125 Gbps |
| M9K Memory Blocks | 270 | — |
| Encapsulado | 896-BGA (FBGA-896), 31 mm | 896-ball FBGA (F31) |
| Ball Pitch | 0.8 mm | — |
| Speed Grade | -7 | C7 (commercial) |
| Temperature Grade | Industrial (-40C to +100C Tj) | — |
| Core Voltage | 1.2 V typical | — |
| Configuration Method | SRAM (EPCS or JTAG) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] | — |
| Estado RoHS | Compliant | Compliant |
| Family | — | Cyclone IV GX |
| Logic Elements | — | 109,424 |
| Embedded Memory (bits) | — | 5,621,760 |
| Maximum User I/O | — | 475 |
| Process Technology | — | 60 nm |
| Core Voltage (VCCINT) | — | 1.2 V nominal (1.16 V to 1.24 V) |
| PLL Analog Voltage (VCCA) | — | 2.5 V nominal (2.375 V to 2.625 V) |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Hard IP Block | — | PCIe Gen1 x1/x2/x4 |
| Operating Temperature (Commercial) | — | 0 °C to 85 °C (TJ) |