EP4CGX110DF31I7 vs EP4CGX110DF31C7N Comparaison
Comparaison détaillée côte à côte de EP4CGX110DF31I7 par Intel et EP4CGX110DF31C7N par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Comparaison des spécifications
| Paramètre | EP4CGX110DF31I7 | EP4CGX110DF31C7N |
|---|---|---|
| Marque | Intel | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $276,34 | $112,40 |
| Series | Cyclone IV GX | — |
| Device Logic Elements | 109,424 | — |
| Total Memory Bits | 5,621,760 | — |
| Number of Logic Array Blocks (LABs) | Not specified in provided data [DATA_NEEDED: LAB count] | — |
| Number of I/O | 475 user I/O | — |
| Multipliers (18x18) | 432 | — |
| PLLs | 4 | 4 general-purpose |
| Transceivers | 8 (up to 3.125 Gbps) | 8 channels, up to 3.125 Gbps |
| M9K Memory Blocks | 270 | — |
| Boîtier | 896-BGA (FBGA-896), 31 mm | 896-ball FBGA (F31) |
| Ball Pitch | 0.8 mm | — |
| Speed Grade | -7 | C7 (commercial) |
| Temperature Grade | Industrial (-40C to +100C Tj) | — |
| Core Voltage | 1.2 V typical | — |
| Configuration Method | SRAM (EPCS or JTAG) | — |
| Type de montage | Surface Mount | Surface Mount |
| Niveau MSL | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] | — |
| Statut RoHS | Compliant | Compliant |
| Family | — | Cyclone IV GX |
| Logic Elements | — | 109,424 |
| Embedded Memory (bits) | — | 5,621,760 |
| Maximum User I/O | — | 475 |
| Process Technology | — | 60 nm |
| Core Voltage (VCCINT) | — | 1.2 V nominal (1.16 V to 1.24 V) |
| PLL Analog Voltage (VCCA) | — | 2.5 V nominal (2.375 V to 2.625 V) |
| I/O Bank Voltage (VCCIO) | — | 1.2 V to 3.3 V (bank-dependent) |
| Hard IP Block | — | PCIe Gen1 x1/x2/x4 |
| Operating Temperature (Commercial) | — | 0 °C to 85 °C (TJ) |