EP4CGX150DF31I7NAD vs EP4CGX110DF31I7 Comparación
Comparación detallada lado a lado de EP4CGX150DF31I7NAD por Altera y EP4CGX110DF31I7 por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Altera
EP4CGX150DF31I7NAD - Cyclone IV GX FPGA 149K LEs | Altera | 896-BGA
EP4CGX150DF31I7NAD ✓ Activo
Comparación de especificaciones
| Parámetro | EP4CGX150DF31I7NAD | EP4CGX110DF31I7 |
|---|---|---|
| Marca | Altera | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $372,40 | $276,34 |
| Family | Cyclone IV GX | — |
| Logic Elements | 149,760 | — |
| Logic Array Blocks (LABs) | 9,360 CLBs | — |
| Embedded Memory Bits | 6,635,520 bits | — |
| Embedded Memory Blocks (M9K) | 720 | — |
| Embedded 18x18 Multipliers | 720 | — |
| Transceiver Channels | 8 (up to 3.125 Gbps) | — |
| PCI Express Hard IP Blocks | 2 | — |
| Maximum User I/O Pins | 475 | — |
| Encapsulado | 896-ball FineLine BGA (FBGA-896), 31 mm, 1.0 mm pitch | 896-BGA (FBGA-896), 31 mm |
| Speed Grade | 7 (industrial, -40C to +100C junction) | -7 |
| Temperatura de unión de funcionamiento | -40C to +100C | — |
| Core Voltage VCCINT | 1.0 V or 1.2 V (transceiver-dependent) | — |
| PLL Analog Voltage VCCA | 2.5 V | — |
| I/O Bank Voltage VCCIO | 1.2 V to 3.3 V (banked) | — |
| Configuration Modes | AS, PS, FPP, JTAG | — |
| Bitstream Encryption | AES-256 | — |
| Estado RoHS | Compliant (Pb-free) | Compliant |
| Ordering Code Suffix | AD (Pb-free tray) | — |
| Series | — | Cyclone IV GX |
| Device Logic Elements | — | 109,424 |
| Total Memory Bits | — | 5,621,760 |
| Number of Logic Array Blocks (LABs) | — | Not specified in provided data [DATA_NEEDED: LAB count] |
| Number of I/O | — | 475 user I/O |
| Multipliers (18x18) | — | 432 |
| PLLs | — | 4 |
| Transceivers | — | 8 (up to 3.125 Gbps) |
| M9K Memory Blocks | — | 270 |
| Ball Pitch | — | 0.8 mm |
| Temperature Grade | — | Industrial (-40C to +100C Tj) |
| Core Voltage | — | 1.2 V typical |
| Configuration Method | — | SRAM (EPCS or JTAG) |
| Tipo de montaje | — | Surface Mount |
| Nivel MSL | — | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] |