EP4CGX150DF31I7NAD vs EP4CGX110DF31I7 Comparaison
Comparaison détaillée côte à côte de EP4CGX150DF31I7NAD par Altera et EP4CGX110DF31I7 par Intel. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Altera
EP4CGX150DF31I7NAD - Cyclone IV GX FPGA 149K LEs | Altera | 896-BGA
EP4CGX150DF31I7NAD ✓ Actif
Comparaison des spécifications
| Paramètre | EP4CGX150DF31I7NAD | EP4CGX110DF31I7 |
|---|---|---|
| Marque | Altera | Intel |
| Catégorie | FPGA & CPLD | FPGA & CPLD |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $372,40 | $276,34 |
| Family | Cyclone IV GX | — |
| Logic Elements | 149,760 | — |
| Logic Array Blocks (LABs) | 9,360 CLBs | — |
| Embedded Memory Bits | 6,635,520 bits | — |
| Embedded Memory Blocks (M9K) | 720 | — |
| Embedded 18x18 Multipliers | 720 | — |
| Transceiver Channels | 8 (up to 3.125 Gbps) | — |
| PCI Express Hard IP Blocks | 2 | — |
| Maximum User I/O Pins | 475 | — |
| Boîtier | 896-ball FineLine BGA (FBGA-896), 31 mm, 1.0 mm pitch | 896-BGA (FBGA-896), 31 mm |
| Speed Grade | 7 (industrial, -40C to +100C junction) | -7 |
| Température de jonction en fonctionnement | -40C to +100C | — |
| Core Voltage VCCINT | 1.0 V or 1.2 V (transceiver-dependent) | — |
| PLL Analog Voltage VCCA | 2.5 V | — |
| I/O Bank Voltage VCCIO | 1.2 V to 3.3 V (banked) | — |
| Configuration Modes | AS, PS, FPP, JTAG | — |
| Bitstream Encryption | AES-256 | — |
| Statut RoHS | Compliant (Pb-free) | Compliant |
| Ordering Code Suffix | AD (Pb-free tray) | — |
| Series | — | Cyclone IV GX |
| Device Logic Elements | — | 109,424 |
| Total Memory Bits | — | 5,621,760 |
| Number of Logic Array Blocks (LABs) | — | Not specified in provided data [DATA_NEEDED: LAB count] |
| Number of I/O | — | 475 user I/O |
| Multipliers (18x18) | — | 432 |
| PLLs | — | 4 |
| Transceivers | — | 8 (up to 3.125 Gbps) |
| M9K Memory Blocks | — | 270 |
| Ball Pitch | — | 0.8 mm |
| Temperature Grade | — | Industrial (-40C to +100C Tj) |
| Core Voltage | — | 1.2 V typical |
| Configuration Method | — | SRAM (EPCS or JTAG) |
| Type de montage | — | Surface Mount |
| Niveau MSL | — | 3 (per JEDEC J-STD-020) [DATA_NEEDED: floor life days] |