EPM570GT144C3 vs EPM570GT144C3N Comparación
Comparación detallada lado a lado de EPM570GT144C3 por Intel y EPM570GT144C3N por Intel. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | EPM570GT144C3 | EPM570GT144C3N |
|---|---|---|
| Marca | Intel | Intel |
| Categoría | FPGA & CPLD | FPGA & CPLD |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $13,50 | $28,95 |
| Family | MAX II | MAX II |
| Logic Elements (LEs) | 570 | 570 |
| Equivalent Macrocells | 440 | 440 |
| User I/O Count | 76 (max, package-dependent) | — |
| Pin-to-Pin Propagation Delay (tPD1) | 5.4 ns (commercial, fastest speed grade) | — |
| User Flash Memory (UFM) | 8 Kbits (8,192 bits) | 8 Kbits |
| Core Supply Voltage | 1.8 V (internal regulator from VCCINT 3.3 V) | — |
| I/O Supply Voltages | 1.5 V / 1.8 V / 2.5 V / 3.3 V (MultiVolt) | — |
| Temperatura de funcionamiento | 0 °C to +85 °C (commercial, C3 grade) | 0 C to +85 C (Commercial) |
| Encapsulado | 144-pin TQFP (GT144) | 144-pin TQFP (20 x 20 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Process Technology | 0.30 µm 6-layer-metal flash CMOS | 6-layer-metal flash CMOS |
| Configuration Method | Non-volatile on-chip flash (instant-on) | — |
| Programming Interface | JTAG IEEE 1149.1 (ISP) | JTAG (IEEE 1149.1) |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | MSL 3 (per JEDEC J-STD-020) | — |
| User I/Os | — | 116 |
| Pin-to-Pin Logic Delay (tPD1) | — | 5.4 ns |
| Internal Supply Voltage | — | 1.71 V to 1.89 V |
| I/O Standards Supported | — | 1.5 V / 1.8 V / 2.5 V / 3.3 V LVCMOS/LVTTL |
| Programmable Type | — | In System Programmable (Flash) |