H5AN4G8NBJR-RDC vs H5AN4G8NBJR-VKIR Comparación
Comparación detallada lado a lado de H5AN4G8NBJR-RDC por SK hynix y H5AN4G8NBJR-VKIR por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN4G8NBJR-RDC | H5AN4G8NBJR-VKIR |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,95 | $1,98 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 4 Gbit | 4 Gb |
| Organización de memoria | 512M x 8 | 512M x 8 |
| Interfaz | DDR4 (Double Data Rate IV) | — |
| Encapsulado | 78-ball FBGA | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Tensión de alimentación | [DATA_NEEDED: VDD supply voltage] | — |
| Velocidad de datos | [DATA_NEEDED: speed grade Mbps] | 2666 Mbps per pin |
| Bank Architecture | 8 banks with 4 bank groups (x8) | — |
| Refresh | Auto-refresh and self-refresh | [DATA_NEEDED: refresh interval specification] |
| Temperature Grade | [DATA_NEEDED: operating temperature range] | — |
| Termination | On-Die Termination (ODT) | — |
| Estado RoHS | Lead-Free & Halogen-Free (RoHS Compliant) | — |
| Process Technology | CMOS | — |
| Manufacturer | SK hynix | — |
| Family Series | H5AN4G4/8/6NBJR | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Operating Temperature (Industrial) | — | -40C to +85C (case) |
| Extended Temperature Range | — | +85C to +95C (case, per datasheet conditions) |
| Technology | — | CMOS DRAM |
| Product Family | — | H5AN4G4/6/8NBJR series |
| Speed Grade Code | — | -VKI |
| Packing Suffix | — | R (Tape & Reel) |
| VPP Supply | — | [DATA_NEEDED: VPP supply voltage] |
| Latencia CAS | — | [DATA_NEEDED: CAS latency] |
| Package Dimensions | — | [DATA_NEEDED: package dimensions] |