H5AN8G8NAFR-PBC vs H5AN8G6NAFR-PBC Comparación
Comparación detallada lado a lado de H5AN8G8NAFR-PBC por SK hynix y H5AN8G6NAFR-PBC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN8G8NAFR-PBC | H5AN8G6NAFR-PBC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $3,55 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gbit |
| Organización de memoria | 1G x 8 | 512M x 16 |
| Tensión de alimentación | 1.2 V | — |
| Encapsulado | FBGA-78 | TFBGA-96 (rectangular) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Speed Grade / Data Rate | [DATA_NEEDED: speed grade / data rate] | — |
| Interfaz | DDR4 (double data rate, synchronized to clock) | — |
| Address Inputs | A0 - A17 (A10/AP, A12/BC_n, RAS_n/A16, CAS_n/A15, WE_n/A14 multiplexed) | — |
| Connectivity Test Mode | TEN (optional input on x4/x8, required on x16) | — |
| Process Technology | CMOS | — |
| Lead-Free | Yes | — |
| Sin halógenos | Yes | — |
| Estado RoHS | Compliant | Compliant (Lead-Free & Halogen-Free) |
| Datasheet Revision | Rev. 1.2 / July 2017 | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: operating temperature range] |
| VDD Supply Voltage | — | 1.20 V +/- 0.06 V |
| VDDQ Supply Voltage | — | 1.20 V +/- 0.06 V |
| VPP Supply Voltage | — | 2.5 V +0.25/-0.125 V |
| Tipo de interfaz | — | DDR4 (parallel, double data rate) |
| Speed Bins Supported | — | DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables) |
| Refresh | — | Auto / Self Refresh |
| DLL | — | DLL ON mode for speed bin operation |
| Clock | — | Differential clock (CK/CK#) |
| Number of Terminals | — | 96 |
| Composition | — | CMOS |