H5AN8G8NAFR-UHCR vs H5AN8G8NAFR-RDC Comparación
Comparación detallada lado a lado de H5AN8G8NAFR-UHCR por SK hynix y H5AN8G8NAFR-RDC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5AN8G8NAFR-UHCR | H5AN8G8NAFR-RDC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,20 | $2,95 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gbit | 8 Gbit |
| Organización de memoria | 1G x 8 | 1G x 8 (x8) |
| Velocidad de datos | 2400 Mbps/pin (PC2400) | 2666 MT/s (per -R speed grade suffix) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interfaz | CMOS, synchronous DDR4 | DDR4 (Double Data Rate 4) |
| Encapsulado | FBGA-78 (PBGA78) | 78-ball FBGA |
| Tipo de montaje | Surface Mount | Surface Mount |
| Packing Suffix | R = Tape & Reel | — |
| Speed Grade Code | -UH | — |
| Generation Family | H5AN8GxNAFR-xxC (DDR4) | — |
| Estado RoHS | Compliant (Lead-Free & Halogen-Free) | Compliant |
| Application Class | Main memory / high bandwidth | — |
| Latencia CAS | [DATA_NEEDED: CAS latency (CL)] | [DATA_NEEDED: CAS Latency] |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: Operating Temperature range] |
| Refresh Rate | [DATA_NEEDED: refresh specification] | — |
| Nivel MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Speed Grade | — | -RDC (DDR4-2666 class) |
| Core Supply Voltage (VDD) | — | 1.2 V |
| I/O Supply Voltage (VDDQ) | — | 1.2 V |
| Wordline Supply (VPP) | — | 2.5 V |
| Banks / Bank Groups | — | 16 banks / 4 bank groups (DDR4 8Gb architecture) |
| Burst Length | — | 8 (BL8) |
| Lead-Free | — | Yes |
| Sin halógenos | — | Yes |
| Datasheet Revision | — | Rev. 1.2 / Jul. 2017 |