H5ANAG6NBJR-RDC vs H5ANAG6NBJR-VKC Comparación
Comparación detallada lado a lado de H5ANAG6NBJR-RDC por SK hynix y H5ANAG6NBJR-VKC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG6NBJR-RDC | H5ANAG6NBJR-VKC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | DRAM | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $9,60 | $15,00 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 16Gb x16 | — |
| Density | 16 Gb | — |
| Velocidad de datos | 2666 Mbps (speed grade -RDC) | 2666 Mbps (per family reference, VKC speed code) |
| Supply Voltage (VDD) | 1.2 V | — |
| Interfaz | Synchronous, double data rate | DDR4, SSTL-12 |
| Clocking | Fully synchronous to both clock edges | — |
| Encapsulado | FBGA (Ball Grid Array), surface mount | FBGA-96 (PBGA96) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | CMOS | — |
| Standard | JEDEC DDR4 SDRAM | — |
| Application | Main memory | — |
| Temperatura de funcionamiento | [DATA_NEEDED: Operating Temperature Range] | -40C to +95C (family grade reference) |
| On-Die Termination (ODT) | Supported (DDR4 feature) | — |
| Bank Group Architecture | DDR4 bank groups (per JEDEC DDR4) | — |
| Estado RoHS | [DATA_NEEDED: RoHS Status] | [DATA_NEEDED: RoHS status] |
| Manufacturer | — | SK Hynix |
| Part Number | — | H5ANAG6NBJR-VKC |
| Memory Density | — | 16Gb (2GB) |
| Organización de memoria | — | [DATA_NEEDED: x16 organization per datasheet] |
| Tensión de alimentación | — | 1.2 V (DDR4 standard) |
| Auto Self-Refresh | — | Yes |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |