H5ANAG8NCMR-VKC vs H5ANAG8NCR-VKC Comparación
Comparación detallada lado a lado de H5ANAG8NCMR-VKC por SK hynix y H5ANAG8NCR-VKC por SK hynix. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Comparación de especificaciones
| Parámetro | H5ANAG8NCMR-VKC | H5ANAG8NCR-VKC |
|---|---|---|
| Marca | SK hynix | SK hynix |
| Categoría | Memory ICs | Memory ICs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $8,05 | $28,13 |
| Tipo de memoria | DDR4 SDRAM | DDR4 SDRAM |
| Tamaño de memoria | 16 Gb | 16 Gbit |
| Memory Organization | 2G x 8 | [DATA_NEEDED: organization (e.g. 2G x8)] |
| Velocidad de datos | 2666 Mbps/pin (DDR4-2666) | — |
| Supply Voltage (VDD) | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Encapsulado | FBGA-78 | FBGA-78 |
| Tipo de montaje | Surface Mount | Surface Mount |
| Speed Grade | VK (per SK hynix speed-bin suffix) | — |
| Power Class | Normal Power | — |
| Bank Groups | 4 | — |
| Banks Total | 16 | — |
| Temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | 0C to +85C |
| Latencia CAS | [DATA_NEEDED: CAS latency for VK speed bin] | — |
| Estado RoHS | [DATA_NEEDED: RoHS status] | Compliant |
| Packaging | [DATA_NEEDED: standard packing quantity] | — |
| Manufacturer Process | CMOS DRAM | — |
| Supply Voltage Range | — | 1.14 V to 1.26 V |
| Nominal Supply Voltage | — | 1.2 V |
| Max Data Rate | — | [DATA_NEEDED: Mbps per pin for VKC grade] |
| Self Refresh | — | Auto self-refresh |
| Data Mask Function | — | Yes |
| On-Chip Termination | — | Dynamic ODT |
| Reset Function | — | Asynchronous reset |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC / CA Parity | — | Yes |
| Auto Precharge | — | Yes |
| Standby Current | — | [DATA_NEEDED: IDD current spec] |