H5ANAG8NCMR-VKC vs H5ANAG8NCR-VKC 对比

详细并排对比 H5ANAG8NCMR-VKC 出自 SK hynix 和 H5ANAG8NCR-VKC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5ANAG8NCMR-VKC H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC - 16Gb DDR4-2666 x8 DRAM FBGA | SK hynix

H5ANAG8NCMR-VKC ✓ 量产中
SK hynix
H5ANAG8NCR-VKC H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix

H5ANAG8NCR-VKC - 16Gb DDR4 SDRAM 1.2V FBGA | SK hynix

H5ANAG8NCR-VKC ✓ 量产中

规格对比

参数 H5ANAG8NCMR-VKC H5ANAG8NCR-VKC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $8.05 $28.13
存储器类型 DDR4 SDRAM DDR4 SDRAM
存储容量 16 Gb 16 Gbit
Memory Organization 2G x 8 [DATA_NEEDED: organization (e.g. 2G x8)]
数据速率 2666 Mbps/pin (DDR4-2666) —
Supply Voltage (VDD) 1.2 V —
I/O Voltage (VDDQ) 1.2 V —
封装 FBGA-78 FBGA-78
安装类型 Surface Mount Surface Mount
Speed Grade VK (per SK hynix speed-bin suffix) —
Power Class Normal Power —
Bank Groups 4 —
Banks Total 16 —
工作温度 [DATA_NEEDED: operating temperature range] 0C to +85C
CAS 延迟 [DATA_NEEDED: CAS latency for VK speed bin] —
RoHS 状态 [DATA_NEEDED: RoHS status] Compliant
Packaging [DATA_NEEDED: standard packing quantity] —
Manufacturer Process CMOS DRAM —
Supply Voltage Range — 1.14 V to 1.26 V
Nominal Supply Voltage — 1.2 V
Max Data Rate — [DATA_NEEDED: Mbps per pin for VKC grade]
Self Refresh — Auto self-refresh
Data Mask Function — Yes
On-Chip Termination — Dynamic ODT
Reset Function — Asynchronous reset
ZQ Calibration — Yes
Write Leveling — Yes
CRC / CA Parity — Yes
Auto Precharge — Yes
Standby Current — [DATA_NEEDED: IDD current spec]

数据手册与资源

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