IAUC100N04S6L014ATMA1 vs IAUC64N08S5L075ATMA1 Comparación
Comparación detallada lado a lado de IAUC100N04S6L014ATMA1 por Infineon y IAUC64N08S5L075ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N04S6L014ATMA1 - 40V 100A OptiMOS 6 N-MOSFET | Infineon
IAUC100N04S6L014ATMA1 ✓ ActivoInfineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N04S6L014ATMA1 | IAUC64N08S5L075ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,58 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | IAUC / OptiMOS 6 40V | — |
| Tipo de transistor | N-Channel MOSFET | N-Channel MOSFET |
| Mode | Enhancement | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tc) | 100 A | — |
| Pulsed Drain Current (I_DM) | [DATA_NEEDED: pulsed drain current] | — |
| R_DS(on) max (V_GS=10V) | 1.4 mOhm | — |
| Gate-Source Voltage (V_GS) max | [DATA_NEEDED: V_GS max rating] | — |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G typical] | — |
| Power Dissipation (P_D, Tc) | 100 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TDSON-8 (SuperSO8, 5x6 mm) | PG-TDSON-8-33 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes | — |
| Technology | OptiMOS 6 | OptiMOS™ 5 |
| Estado RoHS | Compliant | — |
| Nivel MSL | 1 | MSL1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel (ATMA1 suffix) | — |
| Part Number | — | IAUC64N08S5L075ATMA1 |
| Drain-Source Voltage (VDS) | — | 80 V |
| Continuous Drain Current (ID) at TC=25°C | — | 64 A (TJ-limited) |
| On-Resistance (RDS(on)) max at VGS=10V | — | 7.5 mΩ |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: gate-source voltage absolute maximum] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25°C | — | 75 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Automotive Qualification | — | AEC-Q101 qualified |
| RoHS Compliance | — | Compliant |
| Número de pines | — | 8 |