IAUC100N08S5N043ATMA1 vs IAUZ30N10S5L240ATMA1 Comparación
Comparación detallada lado a lado de IAUC100N08S5N043ATMA1 por Infineon y IAUZ30N10S5L240ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΩ N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 ✓ ActivoInfineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΩ OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC100N08S5N043ATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,72 | $0,86 |
| Manufacturer | Infineon Technologies | — |
| Part Series | IAUC / OptiMOS 5 | — |
| Tipo de transistor | N-Channel MOSFET (Enhancement Mode) | — |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 100 A (package limited) | — |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25°C, R<sub>thJC</sub>=1.2 K/W | — |
| Maximum R<sub>DS(on)</sub> | 4.3 mΩ | — |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | -55°C to +175°C (junction, automotive grade) |
| Encapsulado | PG-TDSON-8-34 (SuperSO8) | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Recuento de pines | 8 | — |
| Nivel de sensibilidad a la humedad (MSL) | MSL1 (up to 260°C peak reflow) | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | — |
| RoHS / REACH | RoHS Compliant (Green Product) | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (trench) |
| Channel Mode | Enhancement | — |
| FET Type | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 100 V |
| Continuous Drain Current (I_D, Tc) | — | 30 A |
| R_DS(on) max at V_GS=10V | — | 24 mΩ |
| Gate-Source Voltage (V_GS) max | — | ±20 V |
| Gate Charge (Q_g) typ | — | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | — | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | — | 45.5 W |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) value] |
| Estado RoHS | — | Compliant |
| Lead-Free / Halogen-Free | — | Yes / [DATA_NEEDED: halogen-free status] |