IAUC100N08S5N043ATMA1 vs IAUZ30N10S5L240ATMA1 Comparison
Detailed side-by-side comparison of IAUC100N08S5N043ATMA1 by Infineon and IAUZ30N10S5L240ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC100N08S5N043ATMA1 - 80V 100A 4.3mΞ© N-Ch MOSFET | Infineon
IAUC100N08S5N043ATMA1 β ActiveInfineon
IAUZ30N10S5L240ATMA1 - 100V 30A 24mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUZ30N10S5L240ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC100N08S5N043ATMA1 | IAUZ30N10S5L240ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.72 | $0.86 |
| Manufacturer | Infineon Technologies | β |
| Part Series | IAUC / OptiMOS 5 | β |
| Transistor Type | N-Channel MOSFET (Enhancement Mode) | β |
| Maximum Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 100 A (package limited) | β |
| Continuous Drain Current (chip-limited) | 120 A at T<sub>C</sub>=25Β°C, R<sub>thJC</sub>=1.2 K/W | β |
| Maximum R<sub>DS(on)</sub> | 4.3 mΞ© | β |
| Maximum Power Dissipation (P<sub>D</sub>) | 125 W (T<sub>C</sub>) | β |
| Operating Temperature Range | -55Β°C to +175Β°C | -55Β°C to +175Β°C (junction, automotive grade) |
| Package | PG-TDSON-8-34 (SuperSO8) | PG-TSDSON-8-32 (8-PowerTDFN, exposed drain pad) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Moisture Sensitivity Level (MSL) | MSL1 (up to 260Β°C peak reflow) | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Rating | 100% Avalanche Tested | β |
| RoHS / REACH | RoHS Compliant (Green Product) | β |
| Technology | OptiMOS 5 (Trench) | OptiMOS 5 (trench) |
| Channel Mode | Enhancement | β |
| FET Type | β | N-Channel |
| Drain-Source Voltage (V_DS) | β | 100 V |
| Continuous Drain Current (I_D, Tc) | β | 30 A |
| R_DS(on) max at V_GS=10V | β | 24 mΞ© |
| Gate-Source Voltage (V_GS) max | β | Β±20 V |
| Gate Charge (Q_g) typ | β | 14 nC at V_GS=10V |
| Input Capacitance (C_iss) typ | β | 832 pF at V_DS=50V |
| Power Dissipation (P_D, Tc) | β | 45.5 W |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) value] |
| RoHS Status | β | Compliant |
| Lead-Free / Halogen-Free | β | Yes / [DATA_NEEDED: halogen-free status] |