IAUC120N06S5L015ATMA1 vs IAUC120N06S5N032ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L015ATMA1 por Infineon y IAUC120N06S5N032ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActivoInfineon
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L015ATMA1 | IAUC120N06S5N032ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,92 | $0,61 |
| Technology | N-Channel MOSFET (OptiMOS 5) | OptiMOS-5 N-Channel |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID, Tc=25C) | 235 A | — |
| On-Resistance RDS(on) max (VGS=10 V) | 1.5 mΩ | — |
| Gate Charge (Qg, typ) | 88 nC | — |
| Power Dissipation (PD, Tc=25C) | 167 W | — |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55C to +175C (Tj) |
| Encapsulado | PG-TDSON-8-43 (Surface Mount) | PG-TDSON-8-34 (SSO8 5x6 mm) |
| Tipo de montaje | Surface Mount (exposed pad) | Surface Mount (Tape and Reel) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | MSL 1 (per JEDEC J-STD-020) |
| Drain-Source On-State Resistance Test Conditions | VGS = 10 V, ID = 50 A | — |
| Typical Application | Automotive DC-DC, battery switches, motor drives | — |
| Continuous Drain Current (ID) at TC=25C | — | 120 A |
| Power Dissipation (PD) at TC=25C | — | 94 W |
| On-Resistance RDS(on) max at VGS=10V | — | 3.2 mOhm |
| Gate Charge (Qg) typ | — | 47 nC |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th)] |
| Recuento de pines | — | 8 |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |
| Output Capacitance (Coss) | — | [DATA_NEEDED: Coss] |
| Reverse Recovery Charge (Qrr) | — | [DATA_NEEDED: Qrr] |
| Gate Resistance (Rg) | — | [DATA_NEEDED: Rg] |
| Lead-Free | — | Yes |