IAUC120N06S5L015ATMA1 vs IAUC120N06S5N032ATMA1 对比

详细并排对比 IAUC120N06S5L015ATMA1 出自 Infineon 和 IAUC120N06S5N032ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中
Infineon
IAUC120N06S5N032ATMA1 IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon

IAUC120N06S5N032ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5L015ATMA1 IAUC120N06S5N032ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.92 $0.61
Technology N-Channel MOSFET (OptiMOS 5) OptiMOS-5 N-Channel
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25C) 235 A —
On-Resistance RDS(on) max (VGS=10 V) 1.5 mΩ —
Gate Charge (Qg, typ) 88 nC —
Power Dissipation (PD, Tc=25C) 167 W —
工作温度范围 -55C to +175C (Tj) -55C to +175C (Tj)
封装 PG-TDSON-8-43 (Surface Mount) PG-TDSON-8-34 (SSO8 5x6 mm)
安装类型 Surface Mount (exposed pad) Surface Mount (Tape and Reel)
Automotive Qualification AEC-Q101 qualified AEC-Q101 qualified
Gate-Source Voltage (VGS) max ±20 V —
RoHS 状态 Compliant Compliant
MSL 等级 [DATA_NEEDED: MSL level] MSL 1 (per JEDEC J-STD-020)
Drain-Source On-State Resistance Test Conditions VGS = 10 V, ID = 50 A —
Typical Application Automotive DC-DC, battery switches, motor drives —
Continuous Drain Current (ID) at TC=25C — 120 A
Power Dissipation (PD) at TC=25C — 94 W
On-Resistance RDS(on) max at VGS=10V — 3.2 mOhm
Gate Charge (Qg) typ — 47 nC
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th)]
引脚数量 — 8
Input Capacitance (Ciss) — [DATA_NEEDED: Ciss]
Output Capacitance (Coss) — [DATA_NEEDED: Coss]
Reverse Recovery Charge (Qrr) — [DATA_NEEDED: Qrr]
Gate Resistance (Rg) — [DATA_NEEDED: Rg]
Lead-Free — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价