IAUC120N06S5L032ATMA1 vs IAUC120N04S6L009ATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5L032ATMA1 por Infineon y IAUC120N04S6L009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5L032ATMA1 - 60V 120A OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L032ATMA1 ✓ ActivoInfineon
IAUC120N04S6L009ATMA1 - 40V 0.9mΩ 120A OptiMOS-6 MOSFET | Infineon
IAUC120N04S6L009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5L032ATMA1 | IAUC120N04S6L009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,82 | $1,65 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 (60 V) | OptiMOS-6 40V |
| Tipo de transistor | N-Channel, Enhancement Mode | N-Channel MOSFET |
| Drain-to-Source Voltage (V_DS) | 60 V | — |
| Continuous Drain Current (I_D, T_j) | 120 A | — |
| R_DS(on) Max (V_GS = 10 V) | 3.2 mOhm | — |
| Power Dissipation (P_D, T_C = 25 C) | 94 W | — |
| Encapsulado | PG-TDSON-8-34 (5x6 mm) | PG-TDSON-8-34 (5x6 mm leadless, SS08) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Rango de temperatura de funcionamiento | -55 C to +175 C (T_j) | — |
| Technology | OptiMOS 5 Trench | — |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL rating] | [DATA_NEEDED: MSL rating] |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: V_GS(th) typical and min/max] | — |
| Total Gate Charge Q_G | [DATA_NEEDED: Q_G total at V_GS=10V] | — |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 40 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | — | 150 A (per datasheet header) |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=100°C) | — | [DATA_NEEDED: I_D at TC=100C] |
| Pulsed Drain Current (I<sub>DM</sub>) | — | [DATA_NEEDED: pulsed I_DM] |
| R<sub>DS(on)</sub> max @ V<sub>GS</sub>=10 V | — | 0.9 mΩ |
| R<sub>DS(on)</sub> @ V<sub>GS</sub>=4.5 V | — | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate-Source Threshold Voltage V<sub>GS(th)</sub> | — | [DATA_NEEDED: VGS(th) typ/range] |
| Gate Charge Q<sub>g</sub> | — | [DATA_NEEDED: total gate charge] |
| Power Dissipation P<sub>D</sub> (T<sub>C</sub>=25°C) | — | 150 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Recuento de pines | — | 8 |
| AEC-Q101 Automotive Qualification | — | Yes |
| Avalanche Energy E<sub>AS</sub> | — | [DATA_NEEDED: single-pulse avalanche energy] |