IAUC41N06S5L100ATMA1 vs IAUCN10S7N021ATMA1 Comparación
Comparación detallada lado a lado de IAUC41N06S5L100ATMA1 por Infineon y IAUCN10S7N021ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC41N06S5L100ATMA1 - 60V 41A N-Ch OptiMOS 5 MOSFET | Infineon
IAUC41N06S5L100ATMA1 ✓ ActivoInfineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC41N06S5L100ATMA1 | IAUCN10S7N021ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,43 | $2,05 |
| Technology | OptiMOS 5 (Trench MOSFET) | OptiMOS™ 7 (trench MOSFET) |
| Drain-Source Voltage (VDS) | 60 V | 100 V |
| Continuous Drain Current (ID, Tj) | 41 A | — |
| Power Dissipation (PD, TC) | 42 W | — |
| On-State Resistance (RDS(on)) max | 10 mOhm at VGS=10 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: max VGS rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg total] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | — |
| Encapsulado | PG-TDSON-8-33 (TDSON-8, 5x6 mm) | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad |
| Tipo de montaje | Surface Mount | Surface Mount |
| Channel Type | N-Channel | — |
| Nivel MSL | [DATA_NEEDED: MSL rating] | — |
| Automotive Qualified | Yes (AEC-Q101 automotive grade) | — |
| Estado RoHS | Compliant | Compliant |
| Interconnect | Copper clip (low-inductance) | — |
| FET Type | — | N-Channel |
| Continuous Drain Current (ID) at Tc | — | 175 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current IDM] |
| RDS(on) max @ VGS=10 V | — | 2.1 mΩ |
| Gate-Source Threshold (VGS(th)) typ | — | 3.2 V |
| Total Gate Charge (Qg) @ VGS=10 V | — | 105 nC |
| Input Capacitance (Ciss) | — | 2.98 nF |
| Output Capacitance (Coss) | — | 32 pF |
| Reverse Transfer Capacitance (Crss) | — | 7.153 nF |
| Power Dissipation (Pd) @ Tc | — | 217 W |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |
| Qualification | — | AEC-Q101 (Automotive) |