IAUC64N08S5L075ATMA1 vs IAUZ20N08S5L300ATMA1 Comparación
Comparación detallada lado a lado de IAUC64N08S5L075ATMA1 por Infineon y IAUZ20N08S5L300ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ ActivoInfineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC64N08S5L075ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,58 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | Trench MOSFET (OptiMOS-5) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 10.5 nC @ 10 V |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55°C to +175°C |
| Encapsulado | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| Nivel MSL | MSL1 (per JEDEC J-STD-020) | — |
| Número de pines | 8 | — |
| Product Family | — | OptiMOS-5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) | — | 20 A (Tc) |
| Power Dissipation (Pd) | — | 30 W (Tc) |
| On-State Resistance (Rds(on)) | — | 30 mΩ @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | — | ±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | — | 599 pF @ 40 V |
| Qualification | — | AEC-Q101 (automotive) |
| Estado RoHS | — | Compliant |