IAUC64N08S5L075ATMA1 vs IAUZ20N08S5L300ATMA1 Vergleich
Detaillierter Direktvergleich von IAUC64N08S5L075ATMA1 von Infineon und IAUZ20N08S5L300ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUC64N08S5L075ATMA1 - 80V 7.5mΩ OptiMOS 5 N-Ch MOSFET | Infineon
IAUC64N08S5L075ATMA1 ✓ AktivInfineon
IAUZ20N08S5L300ATMA1 - 80V 20A N-Ch OptiMOS 5 MOSFET | Infineon
IAUZ20N08S5L300ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUC64N08S5L075ATMA1 | IAUZ20N08S5L300ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,58 | $0,81 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | IAUC64N08S5L075ATMA1 | — |
| Transistortyp | N-Channel MOSFET | — |
| Technology | OptiMOS™ 5 | Trench MOSFET (OptiMOS-5) |
| Drain-Source Voltage (VDS) | 80 V | — |
| Continuous Drain Current (ID) at TC=25°C | 64 A (TJ-limited) | — |
| On-Resistance (RDS(on)) max at VGS=10V | 7.5 mΩ | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: gate-source voltage absolute maximum] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | 10.5 nC @ 10 V |
| Power Dissipation (PD) at TC=25°C | 75 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | -55°C to +175°C |
| Gehäuse | PG-TDSON-8-33 (5x6 mm) | PG-TSDSON-8-32 (S3O8) 3.3 x 3.3 mm |
| Montageart | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS Compliance | Compliant | — |
| MSL-Level | MSL1 (per JEDEC J-STD-020) | — |
| Anzahl der Pins | 8 | — |
| Product Family | — | OptiMOS-5 |
| Polarity | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) | — | 20 A (Tc) |
| Power Dissipation (Pd) | — | 30 W (Tc) |
| On-State Resistance (Rds(on)) | — | 30 mΩ @ 10 A, 10 V |
| Gate Threshold Voltage (Vgs(th)) | — | ±20 V (max Vgs rating) |
| Input Capacitance (Ciss) | — | 599 pF @ 40 V |
| Qualification | — | AEC-Q101 (automotive) |
| RoHS-Status | — | Compliant |