IAUC90N10S5N062ATMA1 vs BSZ018NE2LSIATMA1 Comparación
Comparación detallada lado a lado de IAUC90N10S5N062ATMA1 por Infineon y BSZ018NE2LSIATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC90N10S5N062ATMA1 - 100V 90A 6.2mOhm OptiMOS 5 MOSFET | Infineon
IAUC90N10S5N062ATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUC90N10S5N062ATMA1 | BSZ018NE2LSIATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,95 | $0,39 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | — |
| Polarity / Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 100 V | 25 V |
| Continuous Drain Current (ID) at Tc=25C | 90 A | 40 A |
| Maximum On-Resistance RDS(on) max at VGS=10V | 6.2 mOhm | — |
| Gate-Source Threshold Voltage VGS(th) typ | 3.8 V | — |
| Maximum Power Dissipation (Tc=25C) | 115 W | — |
| Temperatura de unión de funcionamiento | -55 C to +175 C | — |
| Encapsulado | PG-TDSON-8-34 (TDSON-8) | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Technology | Trench MOSFET (OptiMOS 5, Generation 5) | OptiMOS (Infineon trench MOSFET) |
| Avalanche Rated | Yes (100% avalanche tested) | — |
| MSL (Moisture Sensitivity Level) | MSL1 (260 C peak reflow) | — |
| Automotive Qualification | AEC-Q101 qualified | — |
| RoHS / Green Product | Yes (RoHS compliant, Green Product) | — |
| Lead-Free | Yes | Yes |
| Part Number | — | BSZ018NE2LSIATMA1 |
| Channel Type | — | N-Channel |
| Continuous Drain Current (ID) at Ta=25C | — | 22 A |
| Pulsed Drain Current (IDM) | — | 160 A |
| Typical On-Resistance RDS(on) at VGS=10V | — | 1.8 mOhm |
| Gate-Source Voltage (VGS) max | — | [DATA_NEEDED: VGS max rating] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical] |
| Power Dissipation at Ta=25C | — | 2.1 W |
| Power Dissipation at Tc=25C | — | 69 W |
| Rango de temperatura de funcionamiento | — | -55 C to +150 C |
| Estado RoHS | — | Compliant |