IAUCN04S7L019ATMA1 vs IAUC120N04S6L005ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L019ATMA1 por Infineon y IAUC120N04S6L005ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N04S6L005ATMA1 - 40V 120A 0.55mΩ N-Channel MOSFET | Infineon
IAUC120N04S6L005ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L019ATMA1 | IAUC120N04S6L005ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,48 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | — |
| FET Type | N-Channel | — |
| Drain-to-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 120 A | — |
| R<sub>DS(on)</sub> Max @ V<sub>GS</sub>=10V | 1.91 mΩ | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: Vgs(th) typical/max value] | — |
| Gate Charge (Q<sub>g</sub>) | [DATA_NEEDED: Qg total/nominal value] | — |
| Encapsulado | PG-TDSON-8-33 | PG-TDSON-8-53 (5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Temperatura de funcionamiento | -55°C to +175°C (junction) | — |
| Power Dissipation (P<sub>D</sub>) | [DATA_NEEDED: Pd max at 25C] | — |
| Resistencia térmica, unión a ambiente | [DATA_NEEDED: RthJA value] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | — |
| Packaging | Tape & Reel (13-inch reel) | — |
| Standard Pack Quantity | 5000 pieces | — |
| Ordering Code Suffix | ATMA1 (Tape & Reel 13") | — |
| Part Number | — | IAUC120N04S6L005ATMA1 |
| Technology | — | OptiMOS 6, N-Channel Trench MOSFET |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | — | 120 A (Tj) |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: IDM pulse rating] |
| Power Dissipation (PD, Tc=25°C) | — | 187 W |
| RDS(on) max at VGS=10 V | — | 0.55 mΩ at 60 A |
| RDS(on) max at VGS=4.5 V | — | 0.85 mΩ |
| Gate-Source Voltage (VGS) | — | ±16 V |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Total Gate Charge (Qg) | — | 177 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 11.203 nF at 25 V |
| Output Capacitance (Coss) | — | 2.982 nF |
| Reverse Transfer Capacitance (Crss) | — | 175 pF |
| Temperatura de unión de funcionamiento | — | -55 °C to +175 °C |