IAUCN04S7L042GATMA1 vs IAUCN04S7L005ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7L042GATMA1 por Infineon y IAUCN04S7L005ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ ActivoInfineon
IAUCN04S7L005ATMA1 - 40V 430A 0.52mΩ OptiMOS 7 MOSFET | Infineon
IAUCN04S7L005ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7L042GATMA1 | IAUCN04S7L005ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,86 | $0,85 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS 7 40V | — |
| Technology | Trench N-Channel MOSFET | OptiMOS 7 (trench N-channel MOSFET) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tj) | 77 A | — |
| Maximum Power Dissipation (PD, Tc) | 50 W | — |
| Encapsulado | PG-THSOG-4 (SSO4G 5x6) leaded surface mount | PG-TDSON-8-43 (TDSON-8) |
| Tipo de montaje | Surface Mount (IMS substrate / FR4 with thermal vias) | Surface Mount |
| Rango de temperatura de funcionamiento | -55C to +175C (Tj) | -55°C to +175°C (Tj) |
| Polarity / Channel Type | N-Channel enhancement mode | — |
| Automotive Qualified | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 | [DATA_NEEDED: MSL rating] |
| Packing | Tape & Reel (per -ATMA1 suffix) | — |
| Target Substrate | IMS substrate and legacy FR4 designs | — |
| On-State Resistance RDS(on) | [DATA_NEEDED: RDS(on) max @ VGS=10V] | — |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) typical/min/max] | — |
| Total Gate Charge Qg | [DATA_NEEDED: Qg @ VGS=10V] | — |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_C=25°C) | — | 430 A (Tj) |
| Continuous Drain Current (I_D, T_C=100°C) | — | [DATA_NEEDED: I_D at T_C=100°C] |
| On-Resistance R_DS(on) max | — | 0.52 mΩ |
| Power Dissipation (P_D) | — | 179 W (T_C) |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical and min/max] |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: total Q_g in nC] |
| Recuento de pines | — | 8 |
| Automotive Qualification | — | AEC-Q101 qualified |
| Lead-Free | — | Yes |