IAUCN04S7N024HATMA1 vs IAUCN04S7N037GATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N024HATMA1 por Infineon y IAUCN04S7N037GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΩ | Infineon
IAUCN04S7N024HATMA1 ✓ ActivoInfineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N024HATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,98 | $0,89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | OptiMOS 7 |
| Configuration | Dual N-Channel (independent) | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, Tj) | 100 A | — |
| On-Resistance R_DS(on) typ | 2.46 mΩ at V_GS = 10 V | — |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | — |
| Maximum Power Dissipation (Tc) | 75 W | — |
| Encapsulado | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-7 trench-gate | Trench MOSFET, N-Channel |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | — |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Packing | Tape & Reel | — |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |