IAUCN04S7N024HATMA1 vs IAUCN04S7N037GATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7N024HATMA1 by Infineon and IAUCN04S7N037GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7N024HATMA1
IAUCN04S7N024HATMA1 - 40V Dual N-Ch OptiMOS-7 2.46mΞ© | Infineon
IAUCN04S7N024HATMA1 β ActiveInfineon
IAUCN04S7N037GATMA1
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7N024HATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.98 | $0.89 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS-7 40 V | OptiMOS 7 |
| Configuration | Dual N-Channel (independent) | β |
| Drain-Source Voltage (V_DS) | 40 V | β |
| Continuous Drain Current (I_D, Tj) | 100 A | β |
| On-Resistance R_DS(on) typ | 2.46 mΞ© at V_GS = 10 V | β |
| On-Resistance R_DS(on) max | [DATA_NEEDED: max R_DS(on) at 10 V V_GS] | β |
| Maximum Power Dissipation (Tc) | 75 W | β |
| Package | PG-TDSON-8-56 (SSO8 HB 5x6 mm) | SSO4G 5x6 mmΒ² (PG-THSOG-4-1) |
| Mounting Type | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | [DATA_NEEDED: junction/ambient temperature limits] |
| Automotive Qualification | AEC-Q101 | AEC-Q101 |
| Technology | OptiMOS-7 trench-gate | Trench MOSFET, N-Channel |
| Gate Threshold Voltage V_GS(th) | [DATA_NEEDED: typical V_GS(th)] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Packing | Tape & Reel | β |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at Tj | β | 91 A |
| On-State Resistance RDS(on) typical | β | 3.65 mΞ© at VGS = 10 V |
| Power Dissipation (PD) at Tc | β | 57 W |
| Channel Type | β | N-Channel |
| Operating Mode | β | Enhancement |
| Gate Charge (Qg) typical | β | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | β | [DATA_NEEDED: Ciss] |