IAUCN04S7N027GATMA1 vs IAUCN04S7L009ATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N027GATMA1 por Infineon y IAUCN04S7L009ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N027GATMA1 - 40V 117A OptiMOS 7 N-Ch MOSFET SSO4G 5x6
IAUCN04S7N027GATMA1 ✓ ActivoInfineon
IAUCN04S7L009ATMA1 - 40V 275A 0.91mΩ OptiMOS 7 N-MOSFET | Infineon
IAUCN04S7L009ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N027GATMA1 | IAUCN04S7L009ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,72 | $0,96 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 7 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (Vds max) | 40 V | — |
| Continuous Drain Current (Id) | 117 A | — |
| On-Resistance (Rds(on) max) | 2.67 mOhm | — |
| Power Dissipation (Pd) | 70 W (Tc) | — |
| Encapsulado / Carcasa | PG-THSOG-4-1 (SSO4G 5x6) | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | Automotive | — |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: operating temperature range] | -55 °C to +175 °C (Tj) |
| Gate Threshold Voltage (Vgs(th)) | [DATA_NEEDED: Vgs(th)] | [DATA_NEEDED: Vgs(th) typical value] |
| Gate-Source Voltage Max (Vgs) | [DATA_NEEDED: Vgs max] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg] | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL] | 1 |
| Substrate Compatibility | IMS substrates and legacy FR-4 | — |
| Part Number | — | IAUCN04S7L009ATMA1 |
| Tipo de transistor | — | N-Channel MOSFET |
| Technology | — | OptiMOS™ 7 (trench-gate) |
| Drain-Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id, Tc=25°C) | — | 275 A (Tj) |
| Continuous Drain Current (Id, Tc=100°C) | — | 175 A |
| Power Dissipation (Pd, Tc=25°C) | — | 129 W |
| Rds(on) Max @ Vgs=10V | — | 0.91 mΩ |
| Gate Charge (Qg) | — | [DATA_NEEDED: total gate charge] |
| Encapsulado | — | PG-TDSON-8-34 (TDSON EP) |
| Automotive Qualification | — | AEC-Q101 qualified |