IAUCN04S7N037GATMA1 vs IAUCN04S7N006TATMA1 Comparación
Comparación detallada lado a lado de IAUCN04S7N037GATMA1 por Infineon y IAUCN04S7N006TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN04S7N037GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,89 | $2,66 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | OptiMOS 7 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| Encapsulado | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| Tipo de montaje | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | — |
| Estado RoHS | Compliant | Compliant |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| Rango de temperatura de funcionamiento | [DATA_NEEDED: junction/ambient temperature limits] | [DATA_NEEDED: Tj min/max] |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |