IAUCN04S7N037GATMA1 vs IAUCN04S7N006TATMA1 비교
다음의 상세 나란히 비교: IAUCN04S7N037GATMA1 제조: Infineon 및 IAUCN04S7N006TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN04S7N037GATMA1 | IAUCN04S7N006TATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.89 | $2.66 |
| Manufacturer | Infineon Technologies | — |
| Series | OptiMOS 7 | — |
| Technology | Trench MOSFET, N-Channel | OptiMOS 7 (shielded-gate trench) |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at Tj | 91 A | — |
| On-State Resistance RDS(on) typical | 3.65 mΩ at VGS = 10 V | — |
| Power Dissipation (PD) at Tc | 57 W | — |
| 패키지 | SSO4G 5x6 mm² (PG-THSOG-4-1) | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) |
| 실장 유형 | Surface Mount (IMS substrate attach compatible) | Surface Mount |
| Channel Type | N-Channel | — |
| Operating Mode | Enhancement | — |
| Automotive Qualification | AEC-Q101 | — |
| RoHS 상태 | Compliant | Compliant |
| MSL 레벨 | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL rating] |
| 동작 온도 범위 | [DATA_NEEDED: junction/ambient temperature limits] | [DATA_NEEDED: Tj min/max] |
| Gate Charge (Qg) typical | [DATA_NEEDED: total gate charge] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical/range] | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Polarity | — | N-Channel |
| Drain-Source Voltage (V_DS) | — | 40 V |
| Continuous Drain Current (I_D, T_j) | — | 425 A |
| Power Dissipation (P_D, T_C) | — | 205 W |
| R_DS(on) (typ, V_GS=10V) | — | 0.63 mΩ |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Total Gate Charge (Q_G) | — | [DATA_NEEDED: Q_G at V_GS=10V] |
| Automotive Grade | — | Yes (Infineon automotive MOSFET line) |
| Lead-Free | — | Yes |