IAUCN08S7L110ATMA1 vs IAUCN04S7N037GATMA1 Comparación
Comparación detallada lado a lado de IAUCN08S7L110ATMA1 por Infineon y IAUCN04S7N037GATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN04S7N037GATMA1 - 40V 91A OptiMOS 7 N-Ch MOSFET | Infineon
IAUCN04S7N037GATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN08S7L110ATMA1 | IAUCN04S7N037GATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,46 | $0,89 |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | — |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | — |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | — |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ | — |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | — |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-TDSON-8-34 (TDSON-8) | SSO4G 5x6 mm² (PG-THSOG-4-1) |
| Tipo de montaje | Surface Mount | Surface Mount (IMS substrate attach compatible) |
| Technology | OptiMOS™ (Trench) | Trench MOSFET, N-Channel |
| Nivel MSL | [DATA_NEEDED: MSL level] | [DATA_NEEDED: MSL level] |
| Estado RoHS | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | — |
| Polarity | Single N-Channel | — |
| Configuration | Single | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS 7 |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tj | — | 91 A |
| On-State Resistance RDS(on) typical | — | 3.65 mΩ at VGS = 10 V |
| Power Dissipation (PD) at Tc | — | 57 W |
| Channel Type | — | N-Channel |
| Operating Mode | — | Enhancement |
| Automotive Qualification | — | AEC-Q101 |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: junction/ambient temperature limits] |
| Gate Charge (Qg) typical | — | [DATA_NEEDED: total gate charge] |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/range] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss] |