IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon
N.º de pieza: IAUCN08S7L110ATMA1 ✓ Activo| Cant. | Precio unitario | Total |
|---|---|---|
| 1 | $0.98 | $0,98 |
| 10 | $0.88 | $8,80 |
| 100 | $0.74 | $74,00 |
| 500 | $0.62 | $310,00 |
| 1.000 | $0.55 | $550,00 |
| 3.000 | $0.46 | $1.380,00 |
IAUCN08S7L110ATMA1 Descripción general
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled switching transistor used as the primary power-conversion element in synchronous buck converters, half-bridges, full-bridges, and motor-drive half-stages. Within the broader taxonomy, MOSFETs belong to discrete semiconductors, then power transistors, then FETs; they are the workhorse of switch-mode power supplies (SMPS) because of their fast switching, low conduction loss, and ease of paralleling. The IAUCN08S7L110 belongs to Infineon's 75 V–120 V automotive-grade MOSFET portfolio targeting 48 V mild-hybrid and high-current automotive LED/load-switch subsystems.
Key features include an 11 mΩ typical R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V, a continuous drain-current rating of 50 A (T<sub>j</sub>) and pulsed capability suitable for repetitive inrush events, an avalanche-rated single-pulse body diode, and an operating junction temperature range of -55 °C to +175 °C qualified to automotive reliability expectations. The PG-TDSON-8-34 package features an exposed drain tab that doubles as the electrical drain connection and a low-thermal-resistance path to the PCB copper pad, allowing direct top-side cooling on the PCB.
The IAUCN08S7L110ATMA1 uses Infineon's advanced trench-cell architecture, balancing low R<sub>DS(on)</sub> × area figure of merit with low gate charge (Q<sub>G</sub>) and low output charge (Q<sub>OSS</sub>) for high-frequency switching. The result is reduced switching loss in hard-switched topologies and improved light-load efficiency in synchronous-rectifier positions. The trench process is qualified per automotive-grade reliability flows.
Typical applications include 48 V automotive systems (mild-hybrid auxiliary loads, e-motor drives), automotive LED lighting drivers, high-side load switches, synchronous rectification in isolated and non-isolated DC-DC converters, and industrial hot-swap / e-fuse circuits. The 80 V rating gives sufficient margin for 48 V bus transients and inductive kick events.
When designing with this part, pay attention to gate-drive voltage: full enhancement (and lowest R<sub>DS(on)</sub>) requires V<sub>GS</sub>=10 V, and operation below ~6 V should be avoided. For high-current (>30 A continuous) designs, the PCB drain pad must be a multi-via array directly under the exposed tab; otherwise the silicon will thermally limit long before its rated current is reached.
This page synthesizes distributor pricing, automotive-grade application context, and PCB-layout thermal guidance drawn from manufacturer documentation that is typically scattered across datasheets and application notes.
Alternativas directas para IAUCN08S7L110ATMA1 — mismo encapsulado, compatible pin a pin. Se excluyen las piezas de otro encapsulado que requieren retrabajo de la PCB.
Variantes de esta serie
Modelos de la misma serie compatibles directamente con IAUCN08S7L110ATMA1 (mismo factor de forma y huella) — difiere en Technology, Package, MSL Level, Series, Drain-Source Voltage (VDS).
Herramienta de comparación rápida — seleccione piezas alternativas para compararlas lado a lado:
IAUCN08S7L033ATMA1
✅ Sustitución directa✓ En stock
$0.86 / unidad
Ver hoja de datos →IAUCN10S5L110TATMA1
✅ Sustitución directa✓ En stock
$2.08 / unidad
Ver hoja de datos →IAUCN10S5L280DATMA1
✅ Sustitución directa✓ En stock
$1.62 / unidad
Ver hoja de datos →IAUCN04S7N037GATMA1
✅ Sustitución directa✓ En stock
$0.89 / unidad
Ver hoja de datos →ISC011N04NM7VATMA1
✅ Sustitución directa✓ En stock
$0.41 / unidad
Ver hoja de datos →BSC076N04NDATMA1
✅ Sustitución directa✓ En stock
$0.82 / unidad
Ver hoja de datos →IAUCN08S7L110ATMA1 Valores máximos y características eléctricas
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΩ |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C |
| Encapsulado | PG-TDSON-8-34 (TDSON-8) |
| Tipo de montaje | Surface Mount |
| Technology | OptiMOS™ (Trench) |
| Estado RoHS | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) |
| Polarity | Single N-Channel |
| Configuration | Single |
Configuración de pines de IAUCN08S7L110ATMA1
| Pin 1 | Source — Source connection (Kelvin source) |
| Pin 2 | Source — Source connection |
| Pin 3 | Source — Source connection |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain connection (also exposed tab) |
| Pin 6 | Drain — Drain connection (also exposed tab) |
| Pin 7 | Drain — Drain connection (also exposed tab) |
| Pin 8 | Drain — Drain connection (also exposed tab) |
Área de funcionamiento seguro - IAUCN08S7L110ATMA1
Aplicaciones típicas
IAUCN08S7L110ATMA1 es adecuado para 7 aplicacións: 48 V Automotive Mild-Hybrid Auxiliary Loads, Automotive LED Lighting Drivers, Synchronous Rectification in 48 V DC-DC Converters, High-Side Load Switches and Hot-Swap Circuits, Industrial 24 V–60 V Motor Drive Half-Bridge, eFuse and Battery Disconnect Units, Power OR-ing and Reverse-Polarity Protection.
48 V Automotive Mild-Hybrid Auxiliary Loads
IAUCN08S7L110ATMA1 is well-suited for 48 V mild-hybrid auxiliary loads. Its 80 V V_DS rating provides ample transient margin above the 48 V nominal bus (with load-dump spikes), while the 11 mΩ R_DS(on) at V_GS=10 V keeps conduction loss low at typical 10–25 A continuous loads such as electric power steering, brake boosters, and coolant pumps. Placed as a high-side switch driven by an Infineon EiceDRIVER gate IC, the MOSFET delivers >97% efficiency at full load. The TDSON-8 exposed drain tab allows PCB-direct cooling without an external heatsink.
Recomendado
Automotive LED Lighting Drivers
IAUCN08S7L110ATMA1 fits automotive LED headlamp and DRL driver stages where high-current PWM switching at 80 V is required. The 50 A continuous rating covers the inrush of large LED arrays at cold-start, while the OptiMOS trench cell gives low Q_G so the high-side FET can switch at >100 kHz with low transition loss. In a buck topology, the IAUCN08S7L110 dissipates less heat than standard MOSFETs, allowing smaller PCB footprints behind headlamp assemblies. The -55 °C to +175 °C junction range supports under-hood and headlamp thermal environments.
Recomendado
Synchronous Rectification in 48 V DC-DC Converters
IAUCN08S7L110ATMA1 works as the synchronous-rectifier FET in non-isolated 48 V-to-12 V buck converters for mild-hybrid power distribution. Its 11 mΩ R_DS(on) at full gate drive minimizes rectifier conduction loss, while low Q_OSS reduces dead-time loss during the switch-node transition. Paired with a primary-side IAUC120N06S5L015ATMA1 or similar 60 V FET, it delivers >95% efficiency across 5–30 A load. The TDSON-8 footprint allows both FETs to share the same land pattern, simplifying PCB layout.
Recomendado
High-Side Load Switches and Hot-Swap Circuits
IAUCN08S7L110ATMA1 is well-matched to high-side load-switch and hot-swap/e-fuse positions in 48 V industrial and automotive systems. Its 80 V V_DS, 50 A I_D, and avalanche-rated body diode handle the inrush of large capacitive loads (e.g., 1000 µF+) and inductive kick events on disconnect. Driven by a high-side gate driver such as IR2117PBF or BTS3028SDRATMA1, the MOSFET enables controlled dV/dt turn-on, inrush limiting, and fast fault isolation. Automotive AEC-Q101-grade reliability supports safety-critical e-fuse applications.
Recomendado
Industrial 24 V–60 V Motor Drive Half-Bridge
IAUCN08S7L110ATMA1 suits industrial 24 V–60 V brushed and BLDC motor-drive half-bridges. Two IAUCN08S7L110ATMA1 in a half-bridge configuration can switch at 25 kHz–50 kHz with low transition loss, driving motors up to 30 A continuous with proper PCB thermal design. The TDSON-8 footprint keeps the half-bridge compact, and the 175 °C junction rating tolerates the high thermal load of stall-current events. Pair with a three-phase gate driver such as 2EDL8033G4CXTMA1 or 6EDL04N02PRXUMA1 for full BLDC control.
Recomendado
eFuse and Battery Disconnect Units
IAUCN08S7L110ATMA1 fits 48 V battery disconnect units (BDU) and electronic fuse (eFuse) modules where fast fault clearance and low steady-state loss are both required. The 11 mΩ R_DS(on) keeps the BDU drop below 0.6 V at 50 A continuous, while the SOA allows short-circuit interruption in the millisecond range when paired with a current-sense amplifier and a fast gate driver. The 80 V V_DS rating covers 48 V nominal plus inductive transient overshoot during disconnect events.
Recomendado
Power OR-ing and Reverse-Polarity Protection
IAUCN08S7L110ATMA1 enables power OR-ing and reverse-polarity protection at 48 V bus inputs. Connected as a source-follower with the drain to the load and body-diode pointing forward, the FET blocks reverse current flow with a low forward drop (~11 mΩ × I_load) under normal operation. This eliminates the ~0.7 V Schottky diode loss common in 48 V OR-ing designs, reducing thermal dissipation by an order of magnitude at 20 A+ load. The 80 V rating comfortably covers 48 V nominal plus transient events.
Recomendado
Resumen de productos recomendados
Datos de referencia de ingeniería para IAUCN08S7L110ATMA1 — comparación, orientación de diseño e información de cumplimiento.
Guía de selección
Comparación con alternativas
| Parámetro | Este producto | IAUCN08S7L033ATMA1 | IAUCN10S5L110TATMA1 | IAUCN10S5L280DATMA1 | ISC011N04NM7VATMA1 | BSC076N04NDATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same | PG-TDSON-8-34 (TDSON-8) - same |
| V_DS max | 80 V | 80 V (same) | 100 V (+25%) | 100 V (+25%) | 40 V (-50%) | 40 V (-50%) |
| R_DS(on) typ at V_GS=10V | 11 mΩ | 3.3 mΩ (lower) | 11 mΩ (same) | 28 mΩ (higher) | 1.1 mΩ (much lower) | 7.6 mΩ (lower) |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) | -55 °C to +175 °C (assumed same family) |
| Technology Family | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) | OptiMOS (Trench) |
Diferenciadores clave
- Balanced 80 V / 11 mΩ / low Q_G OptiMOS in compact TDSON-8 footprint (frente a IAUC120N04S6N009ATMA1)
- Lower R_DS(on) class alternative available in same package (frente a IAUCN08S7L033ATMA1)
- Higher-voltage drop-in for additional bus margin (frente a IAUCN10S5L110TATMA1)
Notas de diseño
Estimated: at 25 A continuous drain current with R_DS(on) = 11 mΩ, conduction loss ≈ I² × R = 625 × 0.011 = 6.9 W. With TDSON-8 θJA ≈ 50 °C/W on a 1 oz 4-layer PCB with 1 sq-inch copper drain pad, junction rise ≈ 6.9 × 50 = 345 °C above ambient - above the 175 °C limit. To stay within SOA at >20 A continuous, use 2 sq-inch copper drain area and a 6×6 thermal-via array under the exposed tab, which drops θJA to ~35 °C/W and junction rise to ~240 °C - still over limit. For continuous >15 A applications, derate to ~50% of nominal or parallel two IAUCN08S7L110ATMA1 devices.
Place the TDSON-8-34 land pattern per the Infineon recommended footprint in the datasheet. Use a 6×6 array of 0.3 mm thermal vias in the drain pad, plugged or capped to prevent solder wicking during reflow. Source pins (1-3) should be routed as a Kelvin source if possible - separate the gate-drive return from the power-source return by a few millimeters to minimize source-inductance-induced gate-drive ringing. Keep gate-drive traces short (<10 mm) and surrounded by ground.
Do not operate the IAUCN08S7L110ATMA1 below V_GS = 6 V - partial enhancement dramatically increases R_DS(on) and causes thermal runaway. Always use a 10 V gate drive (or 8 V minimum). Avoid inductive kick events that exceed the datasheet avalanche energy (E_AS); for relay or motor switching, add a TVS or RC snubber across the drain-source. Finally, ensure the gate-source ESD protection - the gate is ESD-sensitive and a 10 kΩ gate resistor plus a TVS to ground is recommended in production designs.
Información de cumplimiento
Per Infineon product page, IAUCN08S7L110 belongs to the automotive-grade OptiMOS family (AEC-Q101 expected). RoHS and lead-free confirmed per distributor listings; halogen-free status not stated in available data and marked unknown.
