IAUCN10S7L290TATMA1 vs IAUCN04S7L050HATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S7L290TATMA1 por Infineon y IAUCN04S7L050HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ ActivoInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN10S7L290TATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | 5.04 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 °C to +175 °C |
| Encapsulado | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 (family-level, automotive grade) |
| Nivel MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Estado RoHS | — | Compliant |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |