IAUCN10S7L290TATMA1 vs IAUCN04S7L050HATMA1 Comparaison
Comparaison détaillée côte à côte de IAUCN10S7L290TATMA1 par Infineon et IAUCN04S7L050HATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ ActifInfineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUCN10S7L290TATMA1 | IAUCN04S7L050HATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,36 | $0,83 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| Type de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | [DATA_NEEDED: pulsed drain current] |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | 5.04 mΩ |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: total gate charge] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Température de jonction en fonctionnement | -55 °C to +175 °C | -55 °C to +175 °C |
| Boîtier | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TDSON-8-57 (SuperSO8 half-bridge) |
| Type de montage | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 (family-level, automotive grade) |
| Niveau MSL | 1 (per JEDEC J-STD-020) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS™ 7 |
| Configuration | — | Dual N-Channel (Dual Drain, Half-Bridge) |
| Continuous Drain Current (ID), Tc=25°C | — | 65 A |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: gate threshold voltage] |
| Power Dissipation (PD) @ Tc=25°C | — | 40 W |
| Statut RoHS | — | Compliant |
| Technology | — | Trench MOSFET, OptiMOS™ 7 40V |