IAUCN10S7L290TATMA1 vs IAUCN08S7N024TATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S7L290TATMA1 por Infineon y IAUCN08S7N024TATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ ActivoInfineon
IAUCN08S7N024TATMA1 - 80V 2.44mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN08S7N024TATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN10S7L290TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $2,45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | — |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| Nivel MSL | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tj | — | 165 A |
| Power Dissipation (Pd) at Tc | — | 157 W |
| Rds(on) Max at Vgs=10V | — | 2.44 mOhm |
| Encapsulado / Carcasa | — | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| Cooling | — | Top-side cooled |
| Rango de temperatura de funcionamiento | — | [DATA_NEEDED: operating temperature range] |
| Estado RoHS | — | Compliant |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ] |