IAUCN10S7L290TATMA1 vs IAUCN08S7N024TATMA1 비교
다음의 상세 나란히 비교: IAUCN10S7L290TATMA1 제조: Infineon 및 IAUCN08S7N024TATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
사양 비교
| 파라미터 | IAUCN10S7L290TATMA1 | IAUCN08S7N024TATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $0.36 | $2.45 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | — |
| 트랜지스터 유형 | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typ] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | — |
| 패키지 | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | — |
| 실장 유형 | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | AEC-Q101 |
| MSL 레벨 | 1 (per JEDEC J-STD-020) | — |
| RoHS Compliance | Compliant | — |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Series | — | OptiMOS 7 |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide Semiconductor) |
| Drain-Source Voltage (Vds) | — | 80 V |
| Continuous Drain Current (Id) at Tj | — | 165 A |
| Power Dissipation (Pd) at Tc | — | 157 W |
| Rds(on) Max at Vgs=10V | — | 2.44 mOhm |
| 패키지 / 케이스 | — | PG-LHDSO-10-1 (SSO10T, 5x7 mm²) |
| Cooling | — | Top-side cooled |
| 동작 온도 범위 | — | [DATA_NEEDED: operating temperature range] |
| RoHS 상태 | — | Compliant |
| Gate Threshold (Vgs(th)) | — | [DATA_NEEDED: Vgs(th) typical] |
| Input Capacitance (Ciss) | — | [DATA_NEEDED: Ciss typ] |