IAUCN10S7L290TATMA1 vs IAUZN10S7L289ATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S7L290TATMA1 por Infineon y IAUZN10S7L289ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 ✓ Activo
Comparación de especificaciones
| Parámetro | IAUCN10S7L290TATMA1 | IAUZN10S7L289ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $0,36 | $0,92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | OptiMOS-7 |
| Tipo de transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | — |
| Encapsulado | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| Nivel MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Compliance | Compliant | Yes |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Technology | — | Trench MOSFET (N-Channel) |
| Continuous Drain Current (ID, Tj) | — | 27 A |
| Power Dissipation (Ptot, Tc=25°C) | — | 45 W |
| On-State Resistance (RDS(on), max, VGS=10V) | — | 28.9 mΩ |
| Automotive Grade | — | AEC-Q100 qualified (Automotive MOSFET) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Rango de temperatura de funcionamiento | — | -55°C to +175°C (Tj) |
| Estado RoHS | — | Compliant |
| Recuento de pines | — | 8 |