IAUCN10S7L290TATMA1 vs IAUZN10S7L289ATMA1 比較
詳細な並列比較: IAUCN10S7L290TATMA1 メーカー: Infineon および IAUZN10S7L289ATMA1 メーカー: Infineon。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
仕様比較
| パラメータ | IAUCN10S7L290TATMA1 | IAUZN10S7L289ATMA1 |
|---|---|---|
| ブランド | Infineon | Infineon |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.36 | $0.92 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™ 7 | OptiMOS-7 |
| トランジスタタイプ | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 100 V | 100 V |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) at TC=25°C | 27 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM pulse rating] | — |
| On-Resistance RDS(on) max @ VGS=10V | 28.6 mΩ | — |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) at 4.5 V] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: Qg typical] | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25°C | 45 W | — |
| 動作接合温度 | -55 °C to +175 °C | — |
| パッケージ | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled | PG-TSDSON-8-44 (S3O8, 3x3 mm²) |
| 実装タイプ | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q100 qualified | — |
| MSLレベル | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| RoHS Compliance | Compliant | Yes |
| Lead-Free | Yes | — |
| Avalanche Rated | Yes | — |
| ESD Protection | HBM Class 1C (per Infineon datasheet) | — |
| Technology | — | Trench MOSFET (N-Channel) |
| Continuous Drain Current (ID, Tj) | — | 27 A |
| Power Dissipation (Ptot, Tc=25°C) | — | 45 W |
| On-State Resistance (RDS(on), max, VGS=10V) | — | 28.9 mΩ |
| Automotive Grade | — | AEC-Q100 qualified (Automotive MOSFET) |
| Gate Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| 動作温度範囲 | — | -55°C to +175°C (Tj) |
| RoHS ステータス | — | Compliant |
| ピン数 | — | 8 |