IAUCN10S7N021ATMA1 vs IAUC100N04S6L025ATMA1 Comparación
Comparación detallada lado a lado de IAUCN10S7N021ATMA1 por Infineon y IAUC100N04S6L025ATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ ActivoInfineon
IAUC100N04S6L025ATMA1 - 40V 100A OptiMOS 6 MOSFET | Infineon
IAUC100N04S6L025ATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUCN10S7N021ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $2,05 | $0,62 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 C to +175 C |
| Encapsulado | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8 (SuperSO8 5x6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| Estado RoHS | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| Nivel MSL | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |