IAUCN10S7N021ATMA1 vs IAUC100N04S6L025ATMA1 비교
다음의 상세 나란히 비교: IAUCN10S7N021ATMA1 제조: Infineon 및 IAUC100N04S6L025ATMA1 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.
Infineon
IAUCN10S7N021ATMA1 - 100V N-Ch 2.1mΩ OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7N021ATMA1 ✓ 활성사양 비교
| 파라미터 | IAUCN10S7N021ATMA1 | IAUC100N04S6L025ATMA1 |
|---|---|---|
| 브랜드 | Infineon | Infineon |
| 카테고리 | MOSFETs | MOSFETs |
| 수명 주기 상태 | 활성 | 활성 |
| 재고 상태 | In Stock | In Stock |
| 단가 (USD) | $2.05 | $0.62 |
| FET Type | N-Channel | — |
| Technology | OptiMOS™ 7 (trench MOSFET) | OptiMOS 6 40V trench MOSFET |
| Drain-Source Voltage (VDS) | 100 V | 40 V |
| Continuous Drain Current (ID) at Tc | 175 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current IDM] | [DATA_NEEDED: IDM pulse rating] |
| RDS(on) max @ VGS=10 V | 2.1 mΩ | — |
| Gate-Source Threshold (VGS(th)) typ | 3.2 V | — |
| Total Gate Charge (Qg) @ VGS=10 V | 105 nC | — |
| Input Capacitance (Ciss) | 2.98 nF | — |
| Output Capacitance (Coss) | 32 pF | — |
| Reverse Transfer Capacitance (Crss) | 7.153 nF | — |
| Power Dissipation (Pd) @ Tc | 217 W | — |
| 동작 접합 온도 | -55 °C to +175 °C | -55 C to +175 C |
| 패키지 | PG-TDSON-8-53 (SSO8, 5x6 mm) with exposed pad | PG-TDSON-8 (SuperSO8 5x6 mm) |
| 실장 유형 | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | — |
| RoHS 상태 | Compliant | Compliant |
| Polarity | — | N-Channel |
| Continuous Drain Current (ID) at TC=25C | — | 100 A |
| Continuous Drain Current (ID) at TC=100C | — | [DATA_NEEDED: ID at TC=100C] |
| On-State Resistance RDS(on) max at VGS=10V | — | 2.5 mOhm |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typ/min/max] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg total] |
| Power Dissipation (PD) at TC=25C | — | 62 W |
| Automotive Qualification | — | AEC-Q101 qualified |
| MSL 레벨 | — | 1 (per JEDEC J-STD-020) |
| Lead-Free | — | Yes |